RJP30H1DPD

Silicon N Channel IGBT High speed power switching

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販売数量 :24

郵便: (HKPOST, BPOST, China Post)

￥2200以上のご注文で、最初の0.2kg配送料無料。

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米国、メキシコ、カナダ、ブラジル、オーストラリア、イタリア、フランス、スペイン、フランス、英国、ロシア:

￥8800以上のご注文で、最初の0.5kg配送料無料。

その他の国:

￥11500以上のご注文で、最初の0.5kg配送料無料。

在庫状態: 85848

最小数量:1

価格:

￥70

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UTSOURCE 公式

Fedex 送料無料 - 最低ご注文金額 $69.9/ $99.9

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1. Description

This device is a N-channel Power MOSFETs made using the second generation of MDmesh? technology.

This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one

of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high

efficiency converters.

2. Features

> Trench gate and thin wafer technology (G6H-II series)

> High speed switching: tr = 80 ns typ., tf = 150 ns typ.

> Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.

> Low leak current: ICES = 1 A max.

Very good, thank you!

Vietnam

PS9113,IR2233J,BSM25GP120,LTV-356T
I thanks for your fast shipping service. Everything is O.K. I checked all the parts. They are in working condition. I'm very happy.

Sri Lanka

D1557
quality components, competitive prices, prompt deliveries, excellent value for money, great customer service, I am delighted to be working with utsource, Thanks

-1

RJH60F7,S8550,S8050,G40N60B3
Thank you!! Fast delivery

Russia

NE5532P,NE5534P,ZVP3306A
Very good company! Carefully packed and shipped!

Greece

20J321